Fig. 1 | Flexible rectenna based on a 2D self-aligned MoS2-heterostructure Schottky diode. a, Schematic of a lateral Schottky diode based on a MoS2 semiconducting–metallic (2H–1T/1T′) phase junction. The gold layer forms an Ohmic contact with metallic (1T/1T′) MoS2, which also forms an Ohmic contact with semiconducting (2H) MoS2. The palladium layer forms a Schottky contact with semiconducting (2H) MoS2. The antenna converts electromagnetic radiation in the Wi-Fi band into an a.c. signal. The lateral MoS2 diode is fast enough to rectify the a.c. signal and generate a d.c. signal to power a load at its output. The blue and red arrows indicate a.c. and d.c. currents, respectively. Inset, scanning electron microscopy image of a MoS2 Schottky rectifier. Channel width, 40 μm. b, The d.c. I–V characteristics of the MoS2 Schottky diode in the logarithmic scale. Inset, band diagram of the MoS2 Schottky junction under forward bias V. Φbi is the built-in potential of the MoS2 Schottky diode, e is the electron charge and EFindicates the Fermi level of the semiconductingMoS2. c, Currentresponsivity of the MoS2 Schottky diode at different external bias points.